Linear Hall Effect Sensors Elements CYTHS124, Max. Sensitivity: 3.1-4.0 (mV/mT), Measuring range: 2T

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Linear Hall Effect Sensors Elements CYTHS124, Max. Sensitivity: 3.1-4.0 (mV/mT), Measuring range: 2T
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Description Technical Properties Data Sheets
Description
CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal... more
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Linear Hall Effect Sensors Elements CYTHS124, Max. Sensitivity: 3.1-4.0 (mV/mT), Measuring range: 2T

CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group III-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

Characteristics:

  • Excellent Temperature Characteristics
  • Wide Operating Temperature Range
  • Excellent Output Voltage Linearity
  • High Internal Resistance
  • Low Residual Voltage Ratio

Application:

  • High stability motor control
  • Digital tachometer
  • Crank shaft position sensor

 

 

 

Technical Properties
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Measuring range: 2T
Package/Size: SOT143/2.9x1.5x1.1mm
Max. Sensitivity: 3.10 ~ 4.0 mV/mT
Linearity: 2%
Input/Output Resistance: 1000 ~ 1500 kΩ/ 1800 ~ 3000kΩ
Max. Supply current/voltage: 12.0 V
Operating Temperature: -55°C ~ +125°C
Data Sheets
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Data sheets to download:
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