Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T

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Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T
 
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Description Technical Properties Data Sheets
Description
CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal... more
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Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T

CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

 Characteristics

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Wide measuring range 0-3T

Application

  • Magnetic Field Measurement 
  • DC Brushless Motor 
  • Current Sensor 
  • Non-contact Switch 
  • Position Control 
  • Detection Of Revolution
Technical Properties
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Operating Temperature: -40°C ~ +125°C
Measuring range: 3T
Package/Size: SMT/1.5x1.5x0.6mm
Max. Sensitivity: 1.80 ~ 2.5 mV/mT
Linearity: 2%
Input/Output Resistance: 1000 ~ 1500 kΩ/ 1800 ~ 3000kΩ
Max. Supply current/voltage: 12.0 V
Data Sheets
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Data sheets to download:
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