Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T
Product information "Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T"
CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.
Characteristics
- High Linearity
- Superior Temperature Stability
- Miniature Package
- Wide measuring range 0-3T
Application
- Magnetic Field Measurement
- DC Brushless Motor
- Current Sensor
- Non-contact Switch
- Position Control
- Detection Of Revolution
| Input/Output Resistance: | 1000 ~ 1500 kΩ/ 1800 ~ 3000kΩ |
|---|---|
| Linearity: | 2% |
| Max. Sensitivity: | 3.10 ~ 4.1 mV/mT |
| Max. Supply current/voltage: | 12.0 V |
| Measuring Range: | 3T |
| Operating Temperature: | -40°C ~ +125°C |
| Package/Size: | SMT/1.5x1.5x0.6mm |
Manufacturer:
Company name: ChenYang Technologies GmbH & Co.KG
Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland
E-Mail: info@chenyang.de
Phone: +49 8121 2574100
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