Programmable Linear Hall Effect Sensor IC CYL810P

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Preview: Programmable Linear Hall Effect Sensor IC CYL810P Preview: Programmable Linear Hall Effect Sensor IC CYL810P Preview: Programmable Linear Hall Effect Sensor IC CYL810P Preview: Programmable Linear Hall Effect Sensor IC CYL810P Preview: Programmable Linear Hall Effect Sensor IC CYL810P Preview: Programmable Linear Hall Effect Sensor IC CYL810P Preview: Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
Programmable Linear Hall Effect Sensor IC CYL810P
             
 
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Description Technical Properties Data Sheets
Description
The CYL810P is a monolithic programmable Hall effect linear sensor, manufactured using an... more
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Programmable Linear Hall Effect Sensor IC CYL810P

The CYL810P is a monolithic programmable Hall effect linear sensor, manufactured using an advanced BCD (BIPOLAR-CMOS-DMOS, Bipolar-Complementary Metal Oxide SemiconductorDual Diffusion Metal Oxide Semiconductor) process, which includes a high sensitivity Hall sensor, a high accuracy Hall temperature compensation unit, a Hall signal pre-amplifier, an oscillator, a dynamic detuning circuit and an amplifier output module, providing a more efficient AC/DC magnetic field detection solution for a wide application area to communication, industrial and consumer electronic devices. The sensor CYL810P features overcurrent-protected high bandwidth dynamic offset cancellation technology with a static output selectable at 50% VCC or a fixed 2.5V in the absence of a magnetic field. The integrated internal dynamic offset cancellation circuitry makes the sensitivity of the IC unaffected by external stresses and mechanical stresses in the IC package. The CYL810P output voltage is proportional to the applied magnetic field strength and can be programmed on the power supply pin to adjust the IC sensitivity and static zero-field output voltage to improve performance in the final application.

Characteristics

  • Single chip programmable
  • Accuracy (typical): ±1mv @25°C
  • High linearity: ±0.1% @25°C
  • High frequency bandwidth: 65kHz
  • Output response time: 4µs (typical)
  • Temperature range -40°C to 125°C
  • Stability over operating range: 1 .6% @25°C~125°C, 2.5% @ -40°C~25°C
  • Low noise analog signal; high immunity to interference
  • High resistance to mechanical stress, magnetic field parameters are not shifted by external pressure,
  • ESD (HBM) 5kV
  • ROSH approved: (EU) 2015 / 863

Applications

  • Current sensing
  • Position sensing
  • Magnetic code reading
  • Motor control
  • Motor phase current detection (motor control)
  • Photovoltaic inverters
  • Battery load detection systems
  • Speed detection
  • Current transformers
  • Inverter current detection
  • Switching power supplies
  • Overload protection devices
Technical Properties
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Linearity: 0.1%
Operating Temperature: -40°C ~ +125°C
Measuring range: 0-200mT
Quiescent Output voltage: 2.30 V ~ 2.70 V
Package/Size: SIP4/5.13x3.6x1.6mm
Max. Sensitivity: 36.5 ~ 293.0 mV/mT
Max. Supply current/voltage: 11.25mA/6V
Data Sheets
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