GaAs Hall Effect Elements CYSJ902, Max. Sensitivity: 1.44 ~ 2.16 (mV/mT), Measuring range: 3T
Product information "GaAs Hall Effect Elements CYSJ902, Max. Sensitivity: 1.44 ~ 2.16 (mV/mT), Measuring range: 3T"
CYSJ902 series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group III-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.
FEATURES
- High Linearity
- Superior Temperature Stability
- Miniature Package
- Replacements of THS119, KSY14 and KSY44 etc.
TYPICAL APPLICATION
- Magnetic Field Measurement
- DC Brushless Motor
- Current Sensor
- Non-contact Switch
- Position Control
- Detection of Revolution
| Input/Output Resistance: | 650 ~ 850 kΩ/ 650 ~ 850kΩ |
|---|---|
| Linearity: | ±1,0% |
| Max. Sensitivity: | 1.44 ~ 2.16 mV/mT |
| Max. Supply current/voltage: | 13 mA/12 V |
| Measuring Range: | 3T |
| Operating Temperature: | -40°C ~ +125°C |
| Package/Size: | SIP/2.75x2.8x0.9mm |
Manufacturer:
Company name: ChenYang Technologies GmbH & Co.KG
Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland
E-Mail: info@chenyang.de
Phone: +49 8121 2574100
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